page . 1 PJU1N60 april 12,2010-rev.00 fea tures ? 1a, 600v , r ds(on) =1 1 @v gs =10v , i d =0.5a ? low on resistance ? fa st switching ? low gate charge ? fully chara cterized a vala nche v oltage a nd current ? spe ci ally de sigened f or ac ada pter , battery charge a nd smps ? in compli a nce with eu rohs 2002/95/ec dire ctives mechanical da ta ? ca se: t o-220ab / t o-251 molded pla stic ? t ermin als : soldera ble per mil-st d-750,method 2026 or dering informa tion 600v n-channel enhancement mode mosfet m axi mum ra tings a nd thermal chara cteristics (t a =25 o c unle ss otherwise noted ) note : 1. m axi mum dc current li mited by the pa ck age p an jit reser ves the right t o improve product design,functions and reliability without notice inte rna l schematic dia gra m drain gat e source 1 2 3 t o-251 1 2 3 g d s to-2 5 1 type marking package packing PJU1N60 u1n60 to-251 80pcs/tube pa ra m e te r s ym b o l p j u1 n6 0 uni ts d r a i n- s o ur c e vo lta g e v d s 6 0 0 v ga te - s o ur c e vo lta g e v gs + 3 0 v c o nti nuo us d ra i n c ur re nt i d 1 a p u ls e d d r a i n c urr e nt 1 ) i d m 4 .6 a m a xi m um p o we r d i s s i p a ti o n d e ra ti ng f a c to r t a =2 5 o c p d 2 8 0 . 2 2 w op e ra ti ng j unc t i o n a nd s to ra g e te m p e r a ture ra ng e t j ,t s tg -5 5 to +1 5 0 o c av alanche energy with single pulse i as =1.1a, vdd=50v, l=95mh e a s 5 8 m j j unction-to-case thermal resistance r j c 4 .5 o c /w ju nction-to ambient thermal resistance r j a 1 0 0 o c /w
page . 2 PJU1N60 electrical characteristics ( t a =25 o c unless otherwise noted ) note : plus te st: pluse w idth < 300us, duty cycle < 2% . p a r a m e te r s ymb o l te s t c o nd i ti o n m i n. typ . ma x. uni ts s ta ti c d r a i n- s o urc e b re a k d o wn vo lta g e b v d s s v gs =0 v, i d =2 5 0 ua 6 0 0 - - v ga te thre s ho ld vo lta g e v gs (th) v d s =v gs , i d =2 5 0 ua 2 .0 - 4 .0 v d r a i n- s o ur c e on- s ta t e re s i s ta nc e r d s ( o n) v gs = 10v, i d = 0.5 a - 8.3 11 ze r o ga te vo lta g e d r a i n c ur r e nt i d s s v ds = 6 00v, v gs =0v - - 10 ua ga te body leakage i gs s v gs = + 3 0 v, v d s =0 v - - + 1 0 0 n dynamic to ta l ga te c ha r g e q g v d s = 4 8 0 v, i d = 1 .0 a v gs =1 0 v - 6 .2 7 .8 nc g a te - s o ur c e c ha rg e q g s - 1 . 4 4 - ga te - d r a i n c ha r g e q g d - 3.32 - tu r n- on d e la y ti me t d (o n) v dd =3 0 0v, i d = 1.0 a r g = 25 , v gs =1 0 v - 10.2 14.8 ns t ur n- on ri s e ti m e t r - 5.6 8.0 tu r n- off d e la y ti me t d (o ff) - 1 6 2 2 tu r n- off f a ll ti m e t f - 1 0 .2 1 6 in p ut c a p a c i ta nc e c i s s v d s =2 5 v, v gs =0 v f= 1 .0 mh z - 1 6 5 2 2 0 p f o utp ut c a p a c i t a nc e c o s s - 17 28 re ve r s e tra ns f e r c a p a c i ta nc e c rs s - 1.65 4.2 s o urc e - d ra i n d i o d e ma x. d i o d e f o rwa rd c urr e nt i s - - - 1 .0 a ma x.p uls e d s o ur c e c urr e nt i s m - - - 4 .6 a d i o d e f o r wa r d vo lta g e v s d i s =1 a , v gs =0 v - - 1 .5 v re ve r s e re c o ve r y ti m e t r r v gs =0 v, i f = 1 a d i /d t=1 0 0 a /us - 1 9 0 - ns re ve r s e re c o ve r y c ha r g e q rr - 0 .5 - uc april 12,2010-rev.00
fig.1 output characteristric PJU1N60 typical characteristics curves ( ta=25 , unless otherwise noted) fig.2 transfer characteristric 0 0 . 2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v g s = 20v~ 7.0v 5.0v 6.0v 0 5 1 0 1 5 20 25 30 35 0 0.5 1 1.5 2 2.5 3 r ds(on) - on resistance( ) i d - drain current (a) v g s = 20v v g s = 10v 0 5 1 0 1 5 20 25 30 3 4 5 6 7 8 9 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d = 1a t j = 25 o c 0.01 0 . 1 1 10 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v d s = 40v t j = 125 o c 25 o c -55 o c ` fig.1 output characteristric PJU1N60 typical characteristics curves ( ta=25 , unless otherwise noted) fig.2 transfer characteristric fig.3 on resistance vs drain current fig.4 on resistance vs gate to source voltage fig.5 on resistance vs junction temperature fig.6 capacitance p a ge. 3 0 0 . 2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v g s = 20v~ 7.0v 5.0v 6.0v 0 5 1 0 1 5 20 25 30 35 0 0.5 1 1.5 2 2.5 3 r ds(on) - on resistance( ) i d - drain current (a) v g s = 20v v g s = 10v 0 50 1 00 150 200 250 300 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) ciss f = 1mhz v g s = 0v crss coss 0 5 1 0 1 5 20 25 30 3 4 5 6 7 8 9 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d = 1a t j = 25 o c 0.5 0. 7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance(normalized) t j - junction temperature ( o c ) v g s = 10 v i d =1.0a 0.01 0 . 1 1 10 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v d s = 40v t j = 125 o c 25 o c -55 o c april 12,2010-rev.00
fig. 7 gate charge waveform PJU1N60 typical characteristics curves ( ta=25 , unless otherwise fig.8 source-drain diode forward voltage 0.8 0 . 9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv dss - breakdown voltage(normalized) t j - junction temperature ( o c ) i d = 250 a 0.01 0 . 1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v g s = 0v -55 o c 0 2 4 6 8 1 0 1 2 0 1 2 3 4 5 6 7 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d = 1a v d s =480v v d s =300v v d s =120v fig. 7 gate charge waveform PJU1N60 typical characteristics curves ( ta=25 , unless otherwise fig.8 source-drain diode forward voltage fig.9 breakdown voltage vs junction temperature p age. 4 0.8 0 . 9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv dss - breakdown voltage(normalized) t j - junction temperature ( o c) i d = 250 a 0.01 0 . 1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v g s = 0v -55 o c 0 2 4 6 8 1 0 1 2 0 1 2 3 4 5 6 7 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d = 1a v d s =480v v d s =300v v d s =120v april 12,2010-rev.00
page . 5 PJU1N60 copyright panjit international, inc 2010 the inf ormation pre sented in this document is believed to be a ccurate a nd reli a ble. the spe cif ication s a nd inf ormation here in are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. legal st a tement april 12,2010-rev.00
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